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 To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
HSB2838
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-486A (Z) Rev.1 Mar. 2002 Features
* Fast recovery time. * CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSB2838 Laser Mark A6 Package Code CMPAK
Pin Arrangement
3
2 1 (Top View)
1. Anode 2. Anode 3. Cathode
HSB2838
Absolute Maximum Ratings
(Ta = 25C)
Item Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO *
1 1 2
Value 85 80 100 300 4 125 -55 to +125
Unit V V mA mA A C C
IFM * Tj
IFSM * Tstg
Notes: 1. Two device total. 2. Value at duration of 1 sec, two device total.
Electrical Characteristics *
(Ta = 25C)
Item Forward voltage Symbol VF1 VF2 VF3 Reverse current Capacitance Reverse recovery time Note: Per one device. IR C trr Min Typ Max 1.0 1.0 1.2 0.1 2.0 3.0 A pF ns Unit V Test Condition IF = 10 mA IF = 50 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50
Rev.1, Mar. 2002, page 2 of 2
HSB2838
Main Characteristic
10-2 10-3 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-10 10-7 10-6
Reverse current IR (A)
0 0.2 0.4 0.6 0.8 1.0
Forward current IF (A)
10-8
10-9
0
20
40
60
80
100
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f=1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
10 Reverse voltage VR (V)
100
Fig.3 Capacitance vs. Reverse voltage
Rev.1, Mar. 2002, page 3 of 3
HSB2838
Package Dimensions
As of July, 2001
Unit: mm
2.0 0.2
0.1 0.3 + 0.05 -
(0.425)
0.16 - 0.06
+ 0.1
(0.425) 1.25 0.1
2.1 0.3
0 - 0.1
0.1 0.3 + 0.05 -
0.1 0.3 + 0.05 -
1.3 0.2
(0.2)
0.9 0.1
(0.65) (0.65)
Hitachi Code JEDEC JEITA Mass (reference value)
CMPAK -- Conforms 0.006 g
Rev.1, Mar. 2002, page 4 of 4


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